"Wearable devices and environmental sensors ideally should consume very little power to avoid the need for batteries that would have to be replaced. Lee and Nathan developed a thin-film transistor (TFT) from In-Ga-Zn-O thin films. To make the material less conductive, the films were fabricated to avoid oxygen vacancies. The TFT operated at ultralow power (less than 1 nW) and at switching voltages of less than 1 V with very high intrinsic gain. The devices work by changing the height of the so-called Schottky barrier formed between the semiconductor gate material and the metal drain contact."
It's not much better. That graph looks like nonsense and it doesn't really explain things. The abstract is fine but only explains a small fraction of the article by itself.