The most important dimensions are the gate pitch and metal pitch. For TSMC's 7nm process they are something like 60 and 40 nm and go down in the future to something like 30 nm and 20 nm in the 2nm process. Fin width might be the closest thing to commercial name.
They are not even comparable across companies. For example, TSMC 7nm process technology has 91 MTr/mm², Intel's 10 nm prosess technology has 100 MTr/mm². Samsung 10nm has 52 MTr/mm². (MTr/mm² refers to millions of transistors per mm²).
The only hobbyist that I am aware of used a pretty nifty mask less technique but the resolution doesn't come close at all. I think you just mixed up your units.
EDIT: looks like 173M for 5nm. https://en.m.wikipedia.org/wiki/5_nm_process
Intel 7nm is something like 200 MTr/mm2.
It's right that power has severely limited performance despite increasing the transistor density lately. Maybe we'll once again get better with adiabatic computing?
If you will forgive the expression. Yes and No.
Yes in that TSMC has ideas / plans scaling all the way to 0.8nm, targeting 2030. That is only a few steps above what you described as true 7nm.
No in that no one knows if it will work. We know Quantum Tunnelling will hit some day, some where, some how, at some percentage.
Remember you are talking about leading edge Semi-Conductor manufacturing. Nothing like this has ever been done before.
It is a bit like telling me 5G today was possible when I was researching on first gen 3G two decades ago. If you describe to me with theory I will have properly said yes..... but it is hard to imagine how it will actually be implemented.
But yes, I agree the economics model is tough as I have been stating on various forums for years. That is part of the reason why we see Semi-conductors consolidation, like Marvell, Broadcom.
My best guess is that some time in 2026/ 28 we might have to stretch the cycle to three years instead of two. Giving more time to amortised those cost. But HyperScaler Cloud Market seems to be not limited by any R&D funding so I am actually quite optimistic we could see the current 2 year cadence all the way to 2030. Anything beyond is just too hard to predict or infer.
(3.47mm per month)/(30 * 24 * 60 * 60 seconds) = 1.33nm/second
https://youtu.be/uEMDkbF3hu0 https://youtu.be/uXu_1zXOZdY https://youtu.be/_wAeL3f3iV4
FinFET and GAA (gate all around) are 3d transistor designs. Therefore you get impossible and purely theoretical planar numbers.
That number has nearly zero bearing on the actual physical sizes of the chip's components.
The only people who know about the exact dimensions are the firms placing manufacturing contracts with TSMC.
AFAIK the reason behind this madness is that the number previously did correspond to feature size, but then they discovered methods of increasing transistor density without decreasing the size of the components. Since the feature size was used in marketing as a proxy for transistor density, they felt it was ultimately justified to decrease the number. After all, if your enhanced 32nm process provided the same transistor density as your competitor's 22nm process, why shouldn't you market your process as "22nm"?
https://www.electronics-tutorial.net/Digital-CMOS-Design/CMO...
https://spectrum.ieee.org/semiconductors/devices/how-the-fat...
https://www.chu.berkeley.edu/modern-semiconductor-devices-fo...
I don't actually know anything about chip production. But that's what I've picked up from HN.
The knife does get better, it's just not something that the Xnm node names measure directly.
Also, well, that number isn't really the actual resolution of the finest layer, but is some "marketing processed" message that should give you an idea of the chips performance. It used to have the meaning you stated, but things changed a while ago.
for reference "TESCAN is a leading global producer and supplier of scanning electron microscopes, focused ion beam scanning electron microscopes and micro-CT solutions."