Not only this other source is much more detailed, but it does not contain any word about a "1 nm" TSMC process, which seems to be a pure invention of whoever has written the news at TechPowerup.
The discovery of an appropriate material (bismuth) for electrical contacts to MoS2, which is a semiconductor that can be made in monoatomic layers is indeed extremely newsworthy.
There is no doubt that this discovery might enable much denser semiconductor devices in the future, but nobody could say today which would be the name of the TSMC manufacturing process when they would decide to switch from silicon to molybdenum disulfide and in which year would that happen.
Certainly not in a year or two.
Even a prediction of 5 years would be extremely optimistic for any mainstream components like processors.
MoS2 might become usable earlier for some special devices, but there are a huge number of problems to solve before becoming usable for logic devices, e.g. the development of some logic gates appropriate for this material.
Being able to make CMOS gates does not seem very likely, at least not any time soon.
"Ultralow contact resistance between semimetal and monolayer semiconductors"
First, copper deposition gets more, and more defect prone at small feature size — "bad fill"
Second, even if you get ultra tiny M0, then the contact is rather poor.
At such small dimensions the barrier layer that protects silicon from copper might itself stop behaving like a metal, that's why new interconnects go away from copper for M0 to eliminate the barrier layer.
I wonder, if Bismuth is largely required for large scale production of chips in the future, if it will drive more mining for bismuth, as it typically is a byproduct of other metal extraction, particularly lead. If not, would we then see in an increase in the price of Bismuth? Or is the volume of bismuth required for these chips not enough to drive global price increases?