First N-channel diamond field-effect transistor for CMOS integrated circuits

Sadly no data provided on how researchers achieved that. Seems they used "regular" planar lithography process with same old dopant (phosphorus). Now wonder if complimentary P-channel is also possible by using regular boron dopant ? :)

Also, article states that diamond semiconductor can be characterized by high mobility of conductors, which positively effects max switching frequency. Is diamond CPUs our not-so-distant future?

Can we retarget this thread to the primary source, which is https://onlinelibrary.wiley.com/doi/10.1002/advs.202306013 ?