For now, SiC MOSFETs remain more expensive than silicon IGBTs, even if the difference is today much smaller than a few years ago.
So at any new design, one must ponder whether to use the better SiC MOSFETs or the cheaper silicon IGBTs.
Even if they are more expensive, SiC MOSFETs ensure economies elsewhere, i.e. they enable a higher energy efficiency, which reduces the operational costs for the end user, and also the use of cheaper devices in other parts of the system, which can compensate the higher cost of the SiC devices.
So now any price reduction of the SiC devices is welcome, expanding the range of products for which they will be chosen, thus their market share. The price reduction from using wafers with a double area can be very substantial, not only due to producing a double number of devices with a not much greater cost, but also by improving the yields for large-area devices, because usually the chips that are located close to the edge of the wafer have worse yields.
There already are many recent electric vehicles that use SiC MOSFETs, inclusively from Tesla and this is a market that grows quickly and SiC MOSFETs are a critical component for it, by enabling much better efficiency, size and weight of the electronics, in comparison with the old IGBTs.
I am pretty certain that the new EV chargers that can charge a vehicle in less than 10 minutes, or even in only 5 minutes, by working at voltages of up to 1 kV and currents of up to 1 kA, are made with silicon carbide MOSFET modules and it would have been difficult to make them in the past, when only IGBTs were available.