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Yup, back in 2003 I was doing experimental work on creating better EUV mirrors and the amount of reflection achieved was way too low to support any machine with a design similar to UV machines. You needed either a (much) higher intensity source or fewer mirrors.

I've been out of that loop for a while, so I don't know how the design of the EUV machines turned out.

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AFAIK, some (less than?) 2% of energy put into the EUV source ends up at the wafer. The EUV-source has been the biggest struggle for ASML from what I gathered in media.

Apparently, tiny droplets of tin are created by spinning some disk(s) and then those droplets are zapped with with a laser before they emit EUV. Those machines are crazy complex.

UV is under 1%, and EUV is under .01%

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