I would guess the concerns are less about corrupting results, and more about leakage power and switching speed. If you have a very leaky pulldown, switching to "1" is going to be slower.
The only way I see this having a significant effect is through the vt vs. speed trade-off I mentioned above. Lower vt's exponentially increase leakage power, so we push the vt up to combat leakage, but this reduces transistor speed because frequency is roughly proportional to the on-current which is roughly proportional to gate overdrive vdd - vt.