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Out of curiosity, are you sure about #1 ? I all because a long long time ago I worked with some raw NAND on embedded devices and I remember doing small writes, in fact I could do single byte writes (write only, the erase was in big blocks as you said).

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On NAND there is the NOP property (Number of programs). For SLC it is usually 4. So, you can program a single page in up to 4 steps on SLC NAND. If you write less than that, you're wasting space because you need to jump to the next (sub)page. Re-programming is not allowed on NAND.

Partial page programming was supported on some older SLC NAND, but is usually unsupported on modern MLC(/TLC/QLC) flash.

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