I used to think like this, because the previous methods of producing graphene were completely impractical for making integrated circuits.

This new method developed by a team at Georgia Tech together with a Chinese team, works in a completely different way.

Starting from a silicon carbide wafer suitable for integrated circuits, a superficial layer of carbon is made by evaporating the silicon atoms that are close to the surface. Then the carbon layer is crystallized into graphene.

This process makes high-quality semiconducting monocrystalline graphene suitable for making semiconductor devices.

The main challenge that remains is to find a way to make high-quality metallic ohmic contacts to the graphene, because the metallic contacts with chromium that have been used now have a high Shottky barrier voltage, and also to make high-quality lightly doped regions of both p and n polarities, because only one high-quality polarity has been demonstrated yet.

There is a high probability that these problems can be solved now, when a good substrate has become available, which was the hardest problem that prevented the use of graphene.