Regulatory arbitration like this serves nothing?
Don't get me wrong, I would love to see more nuclear, but bad nuclear is not in fact better than none.
252 karma · joined November 15, 2017
Regulatory arbitration like this serves nothing?
Don't get me wrong, I would love to see more nuclear, but bad nuclear is not in fact better than none.
It is ok to be focused and mindful with different aids. Always has been. There are self focused (mindful) and also self-abnegating traditions, and all count.
No harm to.me if others have a different way. If music, or chants, or gardening, have at it.
There are domains (or, mems, photonic sensing, high power) where innovation has a bit more flexibility for the early going.
Old gen logic barely exists, and won't convert. The tools are wrong so it wouldn't yield. And there isnt the expertise (on tool recipes and integration) to do it.
Historically, memory is a sawtooth business. But history isn't a great guide here: 10 years ago, a new plant added meaningful capacity, as it came with a shrink of about 30%. Today....it doesn't. So it take huge capital to add a very small amount of capacity.
You can dream that things like 3d dram and 4f cells will help, but they are unlikely to offer enough with demand.
And finally, everyone running a dram plant has lived through these capacity boom bust cycles and the consequently layoffs and pay cuts. I suspect they are happy to take money this time. I would be in their place.
I do hope we see a new dram or dram-like designs. And that there are more efficient dedicated ai processors. And that models themselves become more memory efficient. But I don't really believe any of these come soon.
John McPhee from the wonderful Annals of the former world
I am also baffled by the multiple control points. I can log in to mail in 3 places. Settings have 3 with different uis....it is gross.
Some neat startups to watch for in this space.
Columnar basalt formation has been understood for a long time, I really don't understand what this explained that wasn't already known?
Which is, I think, the successor and quite useful.
You can do lithography small but slow and expensive. But small means you need a stack, which is even more expensive. At small sizes, defectivity/variation are really difficult.
So if you want a paradigmatic shift, you need low cost patterning, and the best way I can see is to use clever chemistry and a much different design style.
All the calendar, task, website stuff ended up dying away, because what we really needed was a good document management system, with optionally some simple signoff loops and notifications.
That was great. Yes, it was just unix like tools with a window. That is the craigslist of os improvements.
It really was the use case, but the simple one. I saw plenty of power users try to do complex and ultimately fragile uses that died away.
In the case of this user, I love the idea of turning an email to an action, but I also need to add that to my action board and assign it, and check people time, at which point the simple action only makes sense for individuals, not teams or orgs. and I need to add a couple missing actions, and summarize. So suddenly the all in one is a marginally useful tool that is also a straightjacket. And then I go back to outlook and jira and excel and trelli or whatever.
Now, the relative shrink is tiny, so capacity adds are just wspm, in effect, and that gives 5%.
Put differently, you cannot invest your way out of the shortage, or into meaningful share....so you take profit.
These are well understood terms in the field. Unfortunately, this illustrates the bounds of ai in subfields like materials: it confuses people.
If you take the square root of that...you pretty much end up with (modulo a linear scale) the existing nodes.
That gets you size. You then need power and speed, which are a bit trickier to compare without a standard/reference device.
I am not so sure tsm was first. Depends on how you define lowk.
Each of those layers can have a cell, so if you have a tlc device at a 100nm pitch, you have a density of 321*3/(1e-4)^2 bits/mm, or about 1e11bits/mm2.
Fun reference: atomic density is 1atom/.5nm, so 1/5e-7^2, or 4e12/mm2 ish.
Not too far away.
https://www.stat.cmu.edu/~cshalizi/ADAfaEPoV/
There are other fine ones, but these are very good.
Dsa is one of many patterning assist technologies, just...an old one. Neat, but not 'new'. You use patterning assist to make smaller, more regular features, which is exactly what the 16a vs 18a refers to.
That has somewhat less to do with performance, which is tied as much to material, stress, and interface parameters. Nothing gets better from being smaller in the post dennard scaling era, the work of integration is making better devices anyway.
Patterning choices imply different consequences. For example,.a.double euv integration can take advantage of spacer assists to reduce ler and actually improve cdu even with a double expose. Selective etch can improve bias, spacer trickery can create uniquely small regular features that cannot be done with single patterns. Conversely, overlay trees get bushier, and via CD variance can cause horrific electrical variance. It is complicated, history dependent, and everything is on the developmental edge.
For metal/bump voids, hard to inspect any other way
The harder problem for X-ray inspection is that 1) resolution is difficult to scale economically (possible, but hard). And 2) if any version of wafer or die direct bond dominates (I tend to believe it will), then x-ray won't be good enough anyway, so hard to spend the investment on this.
Even more interesting is mask level overlay and CD correction using ultrafast absorption based stress fields. There are some heat technologies out there
A trailing fab has very few people running the operation. This will be a trailing fab.
The best way to understand the dimension is to look at the contacted gate pitchm2 pitchcell height,and take the square root. The pitches obviously make an area, the cell height sets the 'design' component. So you get a reasonably scaled number.
Putting it that way also clarifies technology. Why euv, to tighten contacted gate pitch. Why cobalt: to tighten up metal 2 pitch (without killing resistance). Why backside metal: lowers cell height. There is of course more to it, but it is a good way to coarsely understand
A good way to know if it is marketing is if someone talks about feature sizes instead of pitches. Patterning is done by pitch. For example, you don't do euv to make smaller features. You do it to make more complex layouts at tight pitch.